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Nanoporous Ge thin film production combining Ge sputtering and dopant implantation
In this work a novel process allowing for the production of nanoporous Ge thin films is presented. This process uses the combination of two techniques: Ge sputtering on SiO(2) and dopant ion implantation. The process entails four successive steps: (i) Ge sputtering on SiO(2), (ii) implantation prean...
| Autores principales: | , , , , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Beilstein-Institut
2015
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4362477/ https://www.ncbi.nlm.nih.gov/pubmed/25821672 http://dx.doi.org/10.3762/bjnano.6.32 |