Anatomy of vertical heteroepitaxial interfaces reveals the memristive mechanism in Nb(2)O(5)-NaNbO(3) thin films

Dynamic oxygen vacancies play a significant role in memristive switching materials and memristors can be realized via well controlled doping. Based on this idea we deposite Nb(2)O(5)-NaNbO(3) nanocomposite thin films on SrRuO(3)-buffered LaAlO(3) substrates. Through the spontaneous phase separation...

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Detalles Bibliográficos
Autores principales: Li, Linglong, Lu, Lu, Wang, Zhiguang, Li, Yanxi, Yao, Yonggang, Zhang, Dawei, Yang, Guang, Yao, Jianjun, Viehland, Dwight, Yang, Yaodong
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2015
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4363834/
https://www.ncbi.nlm.nih.gov/pubmed/25784511
http://dx.doi.org/10.1038/srep09229

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4363834/
https://www.ncbi.nlm.nih.gov/pubmed/25784511
http://dx.doi.org/10.1038/srep09229

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