Anatomy of vertical heteroepitaxial interfaces reveals the memristive mechanism in Nb(2)O(5)-NaNbO(3) thin films

Dynamic oxygen vacancies play a significant role in memristive switching materials and memristors can be realized via well controlled doping. Based on this idea we deposite Nb(2)O(5)-NaNbO(3) nanocomposite thin films on SrRuO(3)-buffered LaAlO(3) substrates. Through the spontaneous phase separation...

Descripción completa

Detalles Bibliográficos
Autores principales: Li, Linglong, Lu, Lu, Wang, Zhiguang, Li, Yanxi, Yao, Yonggang, Zhang, Dawei, Yang, Guang, Yao, Jianjun, Viehland, Dwight, Yang, Yaodong
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2015
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4363834/
https://www.ncbi.nlm.nih.gov/pubmed/25784511
http://dx.doi.org/10.1038/srep09229
_version_ 1782361975307632640
author Li, Linglong
Lu, Lu
Wang, Zhiguang
Li, Yanxi
Yao, Yonggang
Zhang, Dawei
Yang, Guang
Yao, Jianjun
Viehland, Dwight
Yang, Yaodong
author_facet Li, Linglong
Lu, Lu
Wang, Zhiguang
Li, Yanxi
Yao, Yonggang
Zhang, Dawei
Yang, Guang
Yao, Jianjun
Viehland, Dwight
Yang, Yaodong
author_sort Li, Linglong
collection PubMed
description Dynamic oxygen vacancies play a significant role in memristive switching materials and memristors can be realized via well controlled doping. Based on this idea we deposite Nb(2)O(5)-NaNbO(3) nanocomposite thin films on SrRuO(3)-buffered LaAlO(3) substrates. Through the spontaneous phase separation and self-assembly growth, two phases form clear vertical heteroepitaxial nanostructures. The interfaces between niobium oxide and sodium niobate full of ion vacancies form the conductive channels. Alternative I-V behavior attributed to dynamic ion migration reveals the memristive switching mechanism under the external bias. We believe that this phenomenon has a great potential in future device applications.
format Online
Article
Text
id pubmed-4363834
institution National Center for Biotechnology Information
language English
publishDate 2015
publisher Nature Publishing Group
record_format MEDLINE/PubMed
spelling pubmed-43638342015-03-27 Anatomy of vertical heteroepitaxial interfaces reveals the memristive mechanism in Nb(2)O(5)-NaNbO(3) thin films Li, Linglong Lu, Lu Wang, Zhiguang Li, Yanxi Yao, Yonggang Zhang, Dawei Yang, Guang Yao, Jianjun Viehland, Dwight Yang, Yaodong Sci Rep Article Dynamic oxygen vacancies play a significant role in memristive switching materials and memristors can be realized via well controlled doping. Based on this idea we deposite Nb(2)O(5)-NaNbO(3) nanocomposite thin films on SrRuO(3)-buffered LaAlO(3) substrates. Through the spontaneous phase separation and self-assembly growth, two phases form clear vertical heteroepitaxial nanostructures. The interfaces between niobium oxide and sodium niobate full of ion vacancies form the conductive channels. Alternative I-V behavior attributed to dynamic ion migration reveals the memristive switching mechanism under the external bias. We believe that this phenomenon has a great potential in future device applications. Nature Publishing Group 2015-03-18 /pmc/articles/PMC4363834/ /pubmed/25784511 http://dx.doi.org/10.1038/srep09229 Text en Copyright © 2015, Macmillan Publishers Limited. All rights reserved http://creativecommons.org/licenses/by/4.0/ This work is licensed under a Creative Commons Attribution 4.0 International License. The images or other third party material in this article are included in the article's Creative Commons license, unless indicated otherwise in the credit line; if the material is not included under the Creative Commons license, users will need to obtain permission from the license holder in order to reproduce the material. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/
spellingShingle Article
Li, Linglong
Lu, Lu
Wang, Zhiguang
Li, Yanxi
Yao, Yonggang
Zhang, Dawei
Yang, Guang
Yao, Jianjun
Viehland, Dwight
Yang, Yaodong
Anatomy of vertical heteroepitaxial interfaces reveals the memristive mechanism in Nb(2)O(5)-NaNbO(3) thin films
title Anatomy of vertical heteroepitaxial interfaces reveals the memristive mechanism in Nb(2)O(5)-NaNbO(3) thin films
title_full Anatomy of vertical heteroepitaxial interfaces reveals the memristive mechanism in Nb(2)O(5)-NaNbO(3) thin films
title_fullStr Anatomy of vertical heteroepitaxial interfaces reveals the memristive mechanism in Nb(2)O(5)-NaNbO(3) thin films
title_full_unstemmed Anatomy of vertical heteroepitaxial interfaces reveals the memristive mechanism in Nb(2)O(5)-NaNbO(3) thin films
title_short Anatomy of vertical heteroepitaxial interfaces reveals the memristive mechanism in Nb(2)O(5)-NaNbO(3) thin films
title_sort anatomy of vertical heteroepitaxial interfaces reveals the memristive mechanism in nb(2)o(5)-nanbo(3) thin films
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4363834/
https://www.ncbi.nlm.nih.gov/pubmed/25784511
http://dx.doi.org/10.1038/srep09229
work_keys_str_mv AT lilinglong anatomyofverticalheteroepitaxialinterfacesrevealsthememristivemechanisminnb2o5nanbo3thinfilms
AT lulu anatomyofverticalheteroepitaxialinterfacesrevealsthememristivemechanisminnb2o5nanbo3thinfilms
AT wangzhiguang anatomyofverticalheteroepitaxialinterfacesrevealsthememristivemechanisminnb2o5nanbo3thinfilms
AT liyanxi anatomyofverticalheteroepitaxialinterfacesrevealsthememristivemechanisminnb2o5nanbo3thinfilms
AT yaoyonggang anatomyofverticalheteroepitaxialinterfacesrevealsthememristivemechanisminnb2o5nanbo3thinfilms
AT zhangdawei anatomyofverticalheteroepitaxialinterfacesrevealsthememristivemechanisminnb2o5nanbo3thinfilms
AT yangguang anatomyofverticalheteroepitaxialinterfacesrevealsthememristivemechanisminnb2o5nanbo3thinfilms
AT yaojianjun anatomyofverticalheteroepitaxialinterfacesrevealsthememristivemechanisminnb2o5nanbo3thinfilms
AT viehlanddwight anatomyofverticalheteroepitaxialinterfacesrevealsthememristivemechanisminnb2o5nanbo3thinfilms
AT yangyaodong anatomyofverticalheteroepitaxialinterfacesrevealsthememristivemechanisminnb2o5nanbo3thinfilms

Ejemplares similares