Carrier localization in In-rich InGaN/GaN multiple quantum wells for green light-emitting diodes

Carrier localization phenomena in indium-rich InGaN/GaN multiple quantum wells (MQWs) grown on sapphire and GaN substrates were investigated. Temperature-dependent photoluminescence (PL) spectroscopy, ultraviolet near-field scanning optical microscopy (NSOM), and confocal time-resolved PL (TRPL) spe...

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Detalles Bibliográficos
Autores principales: Jeong, Hyun, Jeong, Hyeon Jun, Oh, Hye Min, Hong, Chang-Hee, Suh, Eun-Kyung, Lerondel, Gilles, Jeong, Mun Seok
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2015
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4366764/
https://www.ncbi.nlm.nih.gov/pubmed/25792246
http://dx.doi.org/10.1038/srep09373

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4366764/
https://www.ncbi.nlm.nih.gov/pubmed/25792246
http://dx.doi.org/10.1038/srep09373

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