Carrier localization in In-rich InGaN/GaN multiple quantum wells for green light-emitting diodes

Carrier localization phenomena in indium-rich InGaN/GaN multiple quantum wells (MQWs) grown on sapphire and GaN substrates were investigated. Temperature-dependent photoluminescence (PL) spectroscopy, ultraviolet near-field scanning optical microscopy (NSOM), and confocal time-resolved PL (TRPL) spe...

Descripción completa

Detalles Bibliográficos
Autores principales: Jeong, Hyun, Jeong, Hyeon Jun, Oh, Hye Min, Hong, Chang-Hee, Suh, Eun-Kyung, Lerondel, Gilles, Jeong, Mun Seok
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2015
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4366764/
https://www.ncbi.nlm.nih.gov/pubmed/25792246
http://dx.doi.org/10.1038/srep09373
_version_ 1782362416369106944
author Jeong, Hyun
Jeong, Hyeon Jun
Oh, Hye Min
Hong, Chang-Hee
Suh, Eun-Kyung
Lerondel, Gilles
Jeong, Mun Seok
author_facet Jeong, Hyun
Jeong, Hyeon Jun
Oh, Hye Min
Hong, Chang-Hee
Suh, Eun-Kyung
Lerondel, Gilles
Jeong, Mun Seok
author_sort Jeong, Hyun
collection PubMed
description Carrier localization phenomena in indium-rich InGaN/GaN multiple quantum wells (MQWs) grown on sapphire and GaN substrates were investigated. Temperature-dependent photoluminescence (PL) spectroscopy, ultraviolet near-field scanning optical microscopy (NSOM), and confocal time-resolved PL (TRPL) spectroscopy were employed to verify the correlation between carrier localization and crystal quality. From the spatially resolved PL measurements, we observed that the distribution and shape of luminescent clusters, which were known as an outcome of the carrier localization, are strongly affected by the crystalline quality. Spectroscopic analysis of the NSOM signal shows that carrier localization of MQWs with low crystalline quality is different from that of MQWs with high crystalline quality. This interrelation between carrier localization and crystal quality is well supported by confocal TRPL results.
format Online
Article
Text
id pubmed-4366764
institution National Center for Biotechnology Information
language English
publishDate 2015
publisher Nature Publishing Group
record_format MEDLINE/PubMed
spelling pubmed-43667642015-03-31 Carrier localization in In-rich InGaN/GaN multiple quantum wells for green light-emitting diodes Jeong, Hyun Jeong, Hyeon Jun Oh, Hye Min Hong, Chang-Hee Suh, Eun-Kyung Lerondel, Gilles Jeong, Mun Seok Sci Rep Article Carrier localization phenomena in indium-rich InGaN/GaN multiple quantum wells (MQWs) grown on sapphire and GaN substrates were investigated. Temperature-dependent photoluminescence (PL) spectroscopy, ultraviolet near-field scanning optical microscopy (NSOM), and confocal time-resolved PL (TRPL) spectroscopy were employed to verify the correlation between carrier localization and crystal quality. From the spatially resolved PL measurements, we observed that the distribution and shape of luminescent clusters, which were known as an outcome of the carrier localization, are strongly affected by the crystalline quality. Spectroscopic analysis of the NSOM signal shows that carrier localization of MQWs with low crystalline quality is different from that of MQWs with high crystalline quality. This interrelation between carrier localization and crystal quality is well supported by confocal TRPL results. Nature Publishing Group 2015-03-20 /pmc/articles/PMC4366764/ /pubmed/25792246 http://dx.doi.org/10.1038/srep09373 Text en Copyright © 2015, Macmillan Publishers Limited. All rights reserved http://creativecommons.org/licenses/by/4.0/ This work is licensed under a Creative Commons Attribution 4.0 International License. The images or other third party material in this article are included in the article's Creative Commons license, unless indicated otherwise in the credit line; if the material is not included under the Creative Commons license, users will need to obtain permission from the license holder in order to reproduce the material. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/
spellingShingle Article
Jeong, Hyun
Jeong, Hyeon Jun
Oh, Hye Min
Hong, Chang-Hee
Suh, Eun-Kyung
Lerondel, Gilles
Jeong, Mun Seok
Carrier localization in In-rich InGaN/GaN multiple quantum wells for green light-emitting diodes
title Carrier localization in In-rich InGaN/GaN multiple quantum wells for green light-emitting diodes
title_full Carrier localization in In-rich InGaN/GaN multiple quantum wells for green light-emitting diodes
title_fullStr Carrier localization in In-rich InGaN/GaN multiple quantum wells for green light-emitting diodes
title_full_unstemmed Carrier localization in In-rich InGaN/GaN multiple quantum wells for green light-emitting diodes
title_short Carrier localization in In-rich InGaN/GaN multiple quantum wells for green light-emitting diodes
title_sort carrier localization in in-rich ingan/gan multiple quantum wells for green light-emitting diodes
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4366764/
https://www.ncbi.nlm.nih.gov/pubmed/25792246
http://dx.doi.org/10.1038/srep09373
work_keys_str_mv AT jeonghyun carrierlocalizationininrichinganganmultiplequantumwellsforgreenlightemittingdiodes
AT jeonghyeonjun carrierlocalizationininrichinganganmultiplequantumwellsforgreenlightemittingdiodes
AT ohhyemin carrierlocalizationininrichinganganmultiplequantumwellsforgreenlightemittingdiodes
AT hongchanghee carrierlocalizationininrichinganganmultiplequantumwellsforgreenlightemittingdiodes
AT suheunkyung carrierlocalizationininrichinganganmultiplequantumwellsforgreenlightemittingdiodes
AT lerondelgilles carrierlocalizationininrichinganganmultiplequantumwellsforgreenlightemittingdiodes
AT jeongmunseok carrierlocalizationininrichinganganmultiplequantumwellsforgreenlightemittingdiodes

Ejemplares similares