Heterovalent Substitution to Enrich Electrical Conductivity in Cu(2)CdSn(1-x)Ga(x)Se(4) Series for High Thermoelectric Performances

Serials of Ga doping on Sn sites as heterovalent substitution in Cu(2)CdSnSe(4) are prepared by the melting method and the spark plasma sintering (SPS) technique to form Cu(2)CdSn(1-x)Ga(x)Se(4) (x = 0, 0.025, 0.05, 0.075, 0.01, and 0.125). Massive atomic vacancies are found at x = 0.10 by the heter...

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Detalles Bibliográficos
Autores principales: Wang, Bo, Li, Yu, Zheng, Jiaxin, Xu, Ming, Liu, Fusheng, Ao, Weiqing, Li, Junqing, Pan, Feng
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2015
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4366858/
https://www.ncbi.nlm.nih.gov/pubmed/25791823
http://dx.doi.org/10.1038/srep09365

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4366858/
https://www.ncbi.nlm.nih.gov/pubmed/25791823
http://dx.doi.org/10.1038/srep09365

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