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Differential Wide Temperature Range CMOS Interface Circuit for Capacitive MEMS Pressure Sensors
We describe a Complementary Metal-Oxide Semiconductor (CMOS) differential interface circuit for capacitive Micro-Electro-Mechanical Systems (MEMS) pressure sensors that is functional over a wide temperature range between −55 °C and 225 °C. The circuit is implemented using IBM 0.13 μm CMOS technology...
| Autores principales: | , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
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MDPI
2015
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| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4367409/ https://www.ncbi.nlm.nih.gov/pubmed/25686312 http://dx.doi.org/10.3390/s150204253 |