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Differential Wide Temperature Range CMOS Interface Circuit for Capacitive MEMS Pressure Sensors

We describe a Complementary Metal-Oxide Semiconductor (CMOS) differential interface circuit for capacitive Micro-Electro-Mechanical Systems (MEMS) pressure sensors that is functional over a wide temperature range between −55 °C and 225 °C. The circuit is implemented using IBM 0.13 μm CMOS technology...

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Detalles Bibliográficos
Autores principales:	Wang, Yucai, Chodavarapu, Vamsy P.
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	MDPI 2015
Materias:	Article
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4367409/ https://www.ncbi.nlm.nih.gov/pubmed/25686312 http://dx.doi.org/10.3390/s150204253

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