Highly-efficient GaN-based light-emitting diode wafers on La(0.3)Sr(1.7)AlTaO(6) substrates

Highly-efficient GaN-based light-emitting diode (LED) wafers have been grown on La(0.3)Sr(1.7)AlTaO(6) (LSAT) substrates by radio-frequency molecular beam epitaxy (RF-MBE) with optimized growth conditions. The structural properties, surface morphologies, and optoelectronic properties of as-prepared...

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Detalles Bibliográficos
Autores principales: Wang, Wenliang, Yang, Weijia, Gao, Fangliang, Lin, Yunhao, Li, Guoqiang
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2015
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4370033/
https://www.ncbi.nlm.nih.gov/pubmed/25799042
http://dx.doi.org/10.1038/srep09315

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4370033/
https://www.ncbi.nlm.nih.gov/pubmed/25799042
http://dx.doi.org/10.1038/srep09315

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