Micropatterning of TiO(2) Thin Films by MOCVD and Study of Their Growth Tendency

In this work, we studied the growth tendency of TiO(2) thin films deposited on a narrow-stripe area (<10 μm). TiO(2) thin films were selectively deposited on OTS patterned Si(100) substrates by MOCVD. The experimental data showed that the film growth tendency was divided into two behaviors above and below a line patterning width of 4 μm. The relationship between the film thickness and the deposited area was obtained as a function of f(x) = a[1 − e((−bx))]c. To find the tendency of the deposition rate of the TiO(2) thin films onto the various linewidth areas, the relationship between the thickness of the TiO(2) thin film and deposited linewidth was also studied. The thickness of the deposited TiO(2) films was measured from the alpha-step profile analyses and cross-sectional SEM images. At the same time, a computer simulation was carried out to reveal the relationship between the TiO(2) film thickness and deposited line width. The theoretical results suggest that the mass (velocity) flux in flow direction is directly affected to the film thickness.