The impact of thickness and thermal annealing on refractive index for aluminum oxide thin films deposited by atomic layer deposition

The aluminum oxide (Al(2)O(3)) thin films with various thicknesses under 50 nm were deposited by atomic layer deposition (ALD) on silicon substrate. The surface topography investigated by atomic force microscopy (AFM) revealed that the samples were smooth and crack-free. The ellipsometric spectra of Al(2)O(3) thin films were measured and analyzed before and after annealing in nitrogen condition in the wavelength range from 250 to 1,000 nm, respectively. The refractive index of Al(2)O(3) thin films was described by Cauchy model and the ellipsometric spectra data were fitted to a five-medium model consisting of Si substrate/SiO(2) layer/Al(2)O(3) layer/surface roughness/air ambient structure. It is found that the refractive index of Al(2)O(3) thin films decrease with increasing film thickness and the changing trend revised after annealing. The phenomenon is believed to arise from the mechanical stress in ALD-Al(2)O(3) thin films. A thickness transition is also found by transmission electron microscopy (TEM) and SE after 900°C annealing.