Strong localization effect and carrier relaxation dynamics in self-assembled InGaN quantum dots emitting in the green

Strong localization effect in self-assembled InGaN quantum dots (QDs) grown by metalorganic chemical vapor deposition has been evidenced by temperature-dependent photoluminescence (PL) at different excitation power. The integrated emission intensity increases gradually in the range from 30 to 160 K...

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Detalles Bibliográficos
Autores principales: Weng, Guo-En, Zhao, Wan-Ru, Chen, Shao-Qiang, Akiyama, Hidefumi, Li, Zeng-Cheng, Liu, Jian-Ping, Zhang, Bao-Ping
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2015
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4384949/
https://www.ncbi.nlm.nih.gov/pubmed/25852328
http://dx.doi.org/10.1186/s11671-015-0772-z

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4384949/
https://www.ncbi.nlm.nih.gov/pubmed/25852328
http://dx.doi.org/10.1186/s11671-015-0772-z

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