Influence of post-annealing on the off current of MoS(2) field-effect transistors

Two-dimensional materials have recently been spotlighted, due to their unique properties in comparison with conventional bulk and thin-film materials. Among those materials, MoS(2) is one of the promising candidates for the active layer of electronic devices because it shows high electron mobility a...

Descripción completa

Detalles Bibliográficos
Autores principales: Namgung, Seok Daniel, Yang, Suk, Park, Kyung, Cho, Ah-Jin, Kim, Hojoong, Kwon, Jang-Yeon
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2015
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4385010/
https://www.ncbi.nlm.nih.gov/pubmed/25852359
http://dx.doi.org/10.1186/s11671-015-0773-y

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4385010/
https://www.ncbi.nlm.nih.gov/pubmed/25852359
http://dx.doi.org/10.1186/s11671-015-0773-y

Ejemplares similares