Influence of post-annealing on the off current of MoS(2) field-effect transistors

Two-dimensional materials have recently been spotlighted, due to their unique properties in comparison with conventional bulk and thin-film materials. Among those materials, MoS(2) is one of the promising candidates for the active layer of electronic devices because it shows high electron mobility and pristine band gap. In this paper, we focus on the evolution of the electrical property of the MoS(2) field-effect transistor (FET) as a function of post-annealing temperature. The results indicate that the off current drastically decreased at 200°C and increased at 400°C while other factors, such as the mobility and threshold voltage, show little variation. We consider that the decreasing off current comes from the rearrangement of the MoS(2) film and the elimination of the surface residue. Then, the increasing off current was caused by the change of the material's composition and adsorption of H(2)O and O(2). ELECTRONIC SUPPLEMENTARY MATERIAL: The online version of this article (doi:10.1186/s11671-015-0773-y) contains supplementary material, which is available to authorized users.