Effects of doping and annealing on properties of ZnO films grown by atomic layer deposition

Undoped and Al-doped ZnO films were synthesized by atomic layer deposition at 150°C and then annealed at 350°C in different atmospheres. Effects of doping and annealing on the film growth mode and properties were investigated. The undoped film has strong UV emission and weak Zn interstitial emission...

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Detalles Bibliográficos
Autores principales: Wang, Aiji, Chen, Tingfang, Lu, Shuhua, Wu, Zhenglong, Li, Yongliang, Chen, He, Wang, Yinshu
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2015
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4385034/
https://www.ncbi.nlm.nih.gov/pubmed/25852371
http://dx.doi.org/10.1186/s11671-015-0801-y

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4385034/
https://www.ncbi.nlm.nih.gov/pubmed/25852371
http://dx.doi.org/10.1186/s11671-015-0801-y

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