Impact of program/erase operation on the performances of oxide-based resistive switching memory

Further performance improvement is necessary for resistive random access memory (RRAM) to realize its commercialization. In this work, a novel pulse operation method is proposed to improve the performance of RRAM based on Ti/HfO(2)/Pt structure. In the DC voltage sweep of the RRAM device, the SET tr...

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Detalles Bibliográficos
Autores principales: Wang, Guoming, Long, Shibing, Yu, Zhaoan, Zhang, Meiyun, Li, Yang, Xu, Dinglin, Lv, Hangbing, Liu, Qi, Yan, Xiaobing, Wang, Ming, Xu, Xiaoxin, Liu, Hongtao, Yang, Baohe, Liu, Ming
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2015
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4385037/
https://www.ncbi.nlm.nih.gov/pubmed/25852336
http://dx.doi.org/10.1186/s11671-014-0721-2

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4385037/
https://www.ncbi.nlm.nih.gov/pubmed/25852336
http://dx.doi.org/10.1186/s11671-014-0721-2

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