Optical properties and bandgap evolution of ALD HfSiO(x) films

Hafnium silicate films with pure HfO(2) and SiO(2) samples as references were fabricated by atomic layer deposition (ALD) in this work. The optical properties of the films as a function of the film composition were measured by vacuum ultraviolet (VUV) ellipsometer in the energy range of 0.6 to 8.5 e...

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Detalles Bibliográficos
Autores principales: Yang, Wen, Fronk, Michael, Geng, Yang, Chen, Lin, Sun, Qing-Qing, Gordan, Ovidiu D, zhou, Peng, Zahn, Dietrich RT, Zhang, David Wei
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2015
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4385042/
https://www.ncbi.nlm.nih.gov/pubmed/25852329
http://dx.doi.org/10.1186/s11671-014-0724-z

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4385042/
https://www.ncbi.nlm.nih.gov/pubmed/25852329
http://dx.doi.org/10.1186/s11671-014-0724-z

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