Optical properties and bandgap evolution of ALD HfSiO(x) films

Hafnium silicate films with pure HfO(2) and SiO(2) samples as references were fabricated by atomic layer deposition (ALD) in this work. The optical properties of the films as a function of the film composition were measured by vacuum ultraviolet (VUV) ellipsometer in the energy range of 0.6 to 8.5 e...

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Detalles Bibliográficos
Autores principales: Yang, Wen, Fronk, Michael, Geng, Yang, Chen, Lin, Sun, Qing-Qing, Gordan, Ovidiu D, zhou, Peng, Zahn, Dietrich RT, Zhang, David Wei
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2015
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4385042/
https://www.ncbi.nlm.nih.gov/pubmed/25852329
http://dx.doi.org/10.1186/s11671-014-0724-z
Descripción
Sumario:Hafnium silicate films with pure HfO(2) and SiO(2) samples as references were fabricated by atomic layer deposition (ALD) in this work. The optical properties of the films as a function of the film composition were measured by vacuum ultraviolet (VUV) ellipsometer in the energy range of 0.6 to 8.5 eV, and they were investigated systematically based on the Gaussian dispersion model. Experimental results show that optical constants and bandgap of the hafnium silicate films can be tuned by the film composition, and a nonlinear change behavior of bandgap with SiO(2) fraction was observed. This phenomenon mainly originates from the intermixture of d-state electrons in HfO(2) and Si-O antibonding states in SiO(2).

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