Investigation of LRS dependence on the retention of HRS in CBRAM

The insufficient retention prevents the resistive random access memory from intended application, such as code storage, FPGA, encryption, and others. The retention characteristics of high resistance state (HRS) switching from different low resistance state (LRS) were investigated in a 1-kb array wit...

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Detalles Bibliográficos
Autores principales: Xu, Xiaoxin, Lv, Hangbing, Liu, Hongtao, Luo, Qing, Gong, Tiancheng, Wang, Ming, Wang, Guoming, Zhang, Meiyun, Li, Yang, Liu, Qi, Long, Shibing, Liu, Ming
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2015
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4385049/
https://www.ncbi.nlm.nih.gov/pubmed/25852358
http://dx.doi.org/10.1186/s11671-015-0771-0

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4385049/
https://www.ncbi.nlm.nih.gov/pubmed/25852358
http://dx.doi.org/10.1186/s11671-015-0771-0

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