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Inductive crystallization effect of atomic-layer-deposited Hf(0.5)Zr(0.5)O(2) films for ferroelectric application

Ferroelectric Hf(x)Zr(1-x)O(2) thin films are considered promising candidates for future lead-free CMOS-compatible ferroelectric memory application. The inductive crystallization behaviors and the ferroelectric performance of Hf(0.5)Zr(0.5)O(2) thin films prepared by atomic layer deposition were inv...

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Detalles Bibliográficos
Autores principales:	Zhang, Xun, Chen, Lin, Sun, Qing-Qing, Wang, Lu-Hao, Zhou, Peng, Lu, Hong-Liang, Wang, Peng-Fei, Ding, Shi-Jin, Zhang, David Wei
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	Springer US 2015
Materias:	Nano Express
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4385058/ https://www.ncbi.nlm.nih.gov/pubmed/25852322 http://dx.doi.org/10.1186/s11671-014-0711-4

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