Inductive crystallization effect of atomic-layer-deposited Hf(0.5)Zr(0.5)O(2) films for ferroelectric application
Ferroelectric Hf(x)Zr(1-x)O(2) thin films are considered promising candidates for future lead-free CMOS-compatible ferroelectric memory application. The inductive crystallization behaviors and the ferroelectric performance of Hf(0.5)Zr(0.5)O(2) thin films prepared by atomic layer deposition were inv...
Autores principales: | , , , , , , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Springer US
2015
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4385058/ https://www.ncbi.nlm.nih.gov/pubmed/25852322 http://dx.doi.org/10.1186/s11671-014-0711-4 |