Atomic Layer Deposited Hf(0.5)Zr(0.5)O(2)-based Flexible Memristor with Short/Long-Term Synaptic Plasticity

Artificial synapses are the fundamental of building a neuron network for neuromorphic computing to overcome the bottleneck of the von Neumann system. Based on a low-temperature atomic layer deposition process, a flexible electrical synapse was proposed and showed bipolar resistive switching characte...

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Detalles Bibliográficos
Autores principales: Wang, Tian-Yu, Meng, Jia-Lin, He, Zhen-Yu, Chen, Lin, Zhu, Hao, Sun, Qing-Qing, Ding, Shi-Jin, Zhang, David Wei
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2019
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6420527/
https://www.ncbi.nlm.nih.gov/pubmed/30877593
http://dx.doi.org/10.1186/s11671-019-2933-y

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6420527/
https://www.ncbi.nlm.nih.gov/pubmed/30877593
http://dx.doi.org/10.1186/s11671-019-2933-y

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