A Comparative Study on the Ferroelectric Performances in Atomic Layer Deposited Hf(0.5)Zr(0.5)O(2) Thin Films Using Tetrakis(ethylmethylamino) and Tetrakis(dimethylamino) Precursors

The chemical, physical, and electrical properties of the atomic layer deposited Hf(0.5)Zr(0.5)O(2) thin films using tetrakis(ethylmethylamino) (TEMA) and tetrakis(dimethylamino) (TDMA) precursors are compared. The ligand of the metal-organic precursors strongly affects the residual C concentration,...

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Detalles Bibliográficos
Autores principales: Kim, Baek Su, Hyun, Seung Dam, Moon, Taehwan, Do Kim, Keum, Lee, Young Hwan, Park, Hyeon Woo, Lee, Yong Bin, Roh, Jangho, Kim, Beom Yong, Kim, Ho Hyun, Park, Min Hyuk, Hwang, Cheol Seong
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2020
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7138889/
https://www.ncbi.nlm.nih.gov/pubmed/32266598
http://dx.doi.org/10.1186/s11671-020-03301-4

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7138889/
https://www.ncbi.nlm.nih.gov/pubmed/32266598
http://dx.doi.org/10.1186/s11671-020-03301-4

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