Memory Window and Endurance Improvement of Hf(0.5)Zr(0.5)O(2)-Based FeFETs with ZrO(2) Seed Layers Characterized by Fast Voltage Pulse Measurements

The HfO(2)-based ferroelectric field effect transistor (FeFET) with a metal/ferroelectric/insulator/semiconductor (MFIS) gate stack is currently being considered as a possible candidate for high-density and fast write speed non-volatile memory. Although the retention performance of the HfO(2)-based...

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Detalles Bibliográficos
Autores principales: Xiao, Wenwu, Liu, Chen, Peng, Yue, Zheng, Shuaizhi, Feng, Qian, Zhang, Chunfu, Zhang, Jincheng, Hao, Yue, Liao, Min, Zhou, Yichun
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2019
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6660534/
https://www.ncbi.nlm.nih.gov/pubmed/31350697
http://dx.doi.org/10.1186/s11671-019-3063-2

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6660534/
https://www.ncbi.nlm.nih.gov/pubmed/31350697
http://dx.doi.org/10.1186/s11671-019-3063-2

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