The function of a 60-nm-thick AlN buffer layer in n-ZnO/AlN/p-Si(111)

ZnO films were prepared on p-Si (111) substrates by using atomic layer deposition. High-resolution x-ray diffraction (XRD), scanning electron microscopy (SEM), x-ray photoelectron spectroscopy (XPS), photoluminescence (PL), and I-V measurements were carried out to characterize structural, electrical...

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Detalles Bibliográficos
Autores principales: Wang, Wei, Chen, Chao, Zhang, Guozhen, Wang, Ti, Wu, Hao, Liu, Yong, Liu, Chang
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2015
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4385121/
https://www.ncbi.nlm.nih.gov/pubmed/25852387
http://dx.doi.org/10.1186/s11671-015-0809-3

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4385121/
https://www.ncbi.nlm.nih.gov/pubmed/25852387
http://dx.doi.org/10.1186/s11671-015-0809-3

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