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The function of a 60-nm-thick AlN buffer layer in n-ZnO/AlN/p-Si(111)

ZnO films were prepared on p-Si (111) substrates by using atomic layer deposition. High-resolution x-ray diffraction (XRD), scanning electron microscopy (SEM), x-ray photoelectron spectroscopy (XPS), photoluminescence (PL), and I-V measurements were carried out to characterize structural, electrical...

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Detalles Bibliográficos
Autores principales:	Wang, Wei, Chen, Chao, Zhang, Guozhen, Wang, Ti, Wu, Hao, Liu, Yong, Liu, Chang
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	Springer US 2015
Materias:	Nano Express
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4385121/ https://www.ncbi.nlm.nih.gov/pubmed/25852387 http://dx.doi.org/10.1186/s11671-015-0809-3

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