Structure and photoluminescence of the TiO(2) films grown by atomic layer deposition using tetrakis-dimethylamino titanium and ozone

TiO(2) films were grown on silicon substrates by atomic layer deposition (ALD) using tetrakis-dimethylamino titanium and ozone. Amorphous TiO(2) film was deposited at a low substrate temperature of 165°C, and anatase TiO(2) film was grown at 250°C. The amorphous TiO(2) film crystallizes to anatase T...

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Detalles Bibliográficos
Autores principales: Jin, Chunyan, Liu, Ben, Lei, Zhongxiang, Sun, Jiaming
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2015
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4385123/
https://www.ncbi.nlm.nih.gov/pubmed/25852391
http://dx.doi.org/10.1186/s11671-015-0790-x

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4385123/
https://www.ncbi.nlm.nih.gov/pubmed/25852391
http://dx.doi.org/10.1186/s11671-015-0790-x

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