Atomic layer deposition for fabrication of HfO(2)/Al(2)O(3) thin films with high laser-induced damage thresholds

Previous research on the laser damage resistance of thin films deposited by atomic layer deposition (ALD) is rare. In this work, the ALD process for thin film generation was investigated using different process parameters such as various precursor types and pulse duration. The laser-induced damage t...

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Detalles Bibliográficos
Autores principales: Wei, Yaowei, Pan, Feng, Zhang, Qinghua, Ma, Ping
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2015
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4385131/
https://www.ncbi.nlm.nih.gov/pubmed/25852341
http://dx.doi.org/10.1186/s11671-015-0731-8

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4385131/
https://www.ncbi.nlm.nih.gov/pubmed/25852341
http://dx.doi.org/10.1186/s11671-015-0731-8

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