Phase-change properties of GeSbTe thin films deposited by plasma-enchanced atomic layer depositon

Phase-change access memory (PCM) appears to be the strongest candidate for next-generation high-density nonvolatile memory. The fabrication of ultrahigh-density PCM depends heavily on the thin-film growth technique for the phase-changing chalcogenide material. In this study, Ge(2)Sb(2)Te(5) (GST) an...

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Detalles Bibliográficos
Autores principales: Song, Sannian, Yao, Dongning, Song, Zhitang, Gao, Lina, Zhang, Zhonghua, Li, Le, Shen, Lanlan, Wu, Liangcai, Liu, Bo, Cheng, Yan, Feng, Songlin
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2015
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4385138/
https://www.ncbi.nlm.nih.gov/pubmed/25852385
http://dx.doi.org/10.1186/s11671-015-0815-5

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4385138/
https://www.ncbi.nlm.nih.gov/pubmed/25852385
http://dx.doi.org/10.1186/s11671-015-0815-5

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