Room-temperature electrically pumped near-infrared random lasing from high-quality m-plane ZnO-based metal-insulator-semiconductor devices

Epitaxial m-plane ZnO thin films have been deposited on m-plane sapphire substrates at a low temperature of 200°C by atomic layer deposition. A 90° in-plane rotation is observed between the m-plane ZnO thin films and the sapphire substrates. Moreover, the residual strain along the ZnO [−12-10] direc...

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Detalles Bibliográficos
Autores principales: Chen, Chao, Wang, Ti, Wu, Hao, Zheng, He, Wang, Jianbo, Xu, Yang, Liu, Chang
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2015
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4385150/
https://www.ncbi.nlm.nih.gov/pubmed/25852396
http://dx.doi.org/10.1186/s11671-015-0816-4

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4385150/
https://www.ncbi.nlm.nih.gov/pubmed/25852396
http://dx.doi.org/10.1186/s11671-015-0816-4

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