Structural and optical properties of position-retrievable low-density GaAs droplet epitaxial quantum dots for application to single photon sources with plasmonic optical coupling

The position of a single GaAs quantum dot (QD), which is optically active, grown by low-density droplet epitaxy (DE) (approximately 4 QDs/μm(2)), was directly observed on the surface of a 45-nm-thick Al(0.3)Ga(0.7)As capping layer. The thin thickness of AlGaAs capping layer is useful for single phot...

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Detalles Bibliográficos
Autores principales: Lee, Eun-Hye, Song, Jin-Dong, Han, Il-Ki, Chang, Soo-Kyung, Langer, Fabian, Höfling, Sven, Forchel, Alfred, Kamp, Martin, Kim, Jong-Su
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2015
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4385222/
https://www.ncbi.nlm.nih.gov/pubmed/25852409
http://dx.doi.org/10.1186/s11671-015-0826-2

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4385222/
https://www.ncbi.nlm.nih.gov/pubmed/25852409
http://dx.doi.org/10.1186/s11671-015-0826-2

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