AlGaN/GaN MISHEMTs with AlN gate dielectric grown by thermal ALD technique

Recently, AlN plasma-enhanced atomic layer deposition (ALD) passivation technique had been proposed and investigated for suppressing the dynamic on-resistance degradation behavior of high-electron-mobility transistors (HEMTs). In this paper, a novel gate dielectric and passivation technique for GaN-...

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Detalles Bibliográficos
Autores principales: Liu, Xiao-Yong, Zhao, Sheng-Xun, Zhang, Lin-Qing, Huang, Hong-Fan, Shi, Jin-Shan, Zhang, Chun-Min, Lu, Hong-Liang, Wang, Peng-Fei, Zhang, David Wei
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2015
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4385223/
https://www.ncbi.nlm.nih.gov/pubmed/25852404
http://dx.doi.org/10.1186/s11671-015-0802-x

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4385223/
https://www.ncbi.nlm.nih.gov/pubmed/25852404
http://dx.doi.org/10.1186/s11671-015-0802-x

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