Oxidation precursor dependence of atomic layer deposited Al(2)O(3) films in a-Si:H(i)/Al(2)O(3) surface passivation stacks

In order to obtain a good passivation of a silicon surface, more and more stack passivation schemes have been used in high-efficiency silicon solar cell fabrication. In this work, we prepared a-Si:H(i)/Al(2)O(3) stacks on KOH solution-polished n-type solar grade mono-silicon(100) wafers. For the Al(...

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Detalles Bibliográficos
Autores principales: Xiang, Yuren, Zhou, Chunlan, Jia, Endong, Wang, Wenjing
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2015
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4385324/
https://www.ncbi.nlm.nih.gov/pubmed/25852428
http://dx.doi.org/10.1186/s11671-015-0798-2

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4385324/
https://www.ncbi.nlm.nih.gov/pubmed/25852428
http://dx.doi.org/10.1186/s11671-015-0798-2

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