Physical and chemical mechanisms in oxide-based resistance random access memory

In this review, we provide an overview of our work in resistive switching mechanisms on oxide-based resistance random access memory (RRAM) devices. Based on the investigation of physical and chemical mechanisms, we focus on its materials, device structures, and treatment methods so as to provide an...

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Detalles Bibliográficos
Autores principales: Chang, Kuan-Chang, Chang, Ting-Chang, Tsai, Tsung-Ming, Zhang, Rui, Hung, Ya-Chi, Syu, Yong-En, Chang, Yao-Feng, Chen, Min-Chen, Chu, Tian-Jian, Chen, Hsin-Lu, Pan, Chih-Hung, Shih, Chih-Cheng, Zheng, Jin-Cheng, Sze, Simon M
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2015
Materias:
Nano Review
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4388104/
https://www.ncbi.nlm.nih.gov/pubmed/25873842
http://dx.doi.org/10.1186/s11671-015-0740-7

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4388104/
https://www.ncbi.nlm.nih.gov/pubmed/25873842
http://dx.doi.org/10.1186/s11671-015-0740-7

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