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Silicon diffusion control in atomic-layer-deposited Al(2)O(3)/La(2)O(3)/Al(2)O(3) gate stacks using an Al(2)O(3) barrier layer

In this study, the physical and electrical characteristics of Al(2)O(3)/La(2)O(3)/Al(2)O(3)/Si stack structures affected by the thickness of an Al(2)O(3) barrier layer between Si substrate and La(2)O(3) layer are investigated after a rapid thermal annealing (RTA) treatment. Time of flight secondary...

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Detalles Bibliográficos
Autores principales: Wang, Xing, Liu, Hong-Xia, Fei, Chen-Xi, Yin, Shu-Ying, Fan, Xiao-Jiao
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2015
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4398676/
https://www.ncbi.nlm.nih.gov/pubmed/25897303
http://dx.doi.org/10.1186/s11671-015-0842-2