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Silicon diffusion control in atomic-layer-deposited Al(2)O(3)/La(2)O(3)/Al(2)O(3) gate stacks using an Al(2)O(3) barrier layer
In this study, the physical and electrical characteristics of Al(2)O(3)/La(2)O(3)/Al(2)O(3)/Si stack structures affected by the thickness of an Al(2)O(3) barrier layer between Si substrate and La(2)O(3) layer are investigated after a rapid thermal annealing (RTA) treatment. Time of flight secondary...
Autores principales: | Wang, Xing, Liu, Hong-Xia, Fei, Chen-Xi, Yin, Shu-Ying, Fan, Xiao-Jiao |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Springer US
2015
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4398676/ https://www.ncbi.nlm.nih.gov/pubmed/25897303 http://dx.doi.org/10.1186/s11671-015-0842-2 |
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