Stepwise mechanism and H(2)O-assisted hydrolysis in atomic layer deposition of SiO(2) without a catalyst

Atomic layer deposition (ALD) is a powerful deposition technique for constructing uniform, conformal, and ultrathin films in microelectronics, photovoltaics, catalysis, energy storage, and conversion. The possible pathways for silicon dioxide (SiO(2)) ALD using silicon tetrachloride (SiCl(4)) and wa...

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Detalles Bibliográficos
Autores principales: Fang, Guo-Yong, Xu, Li-Na, Wang, Lai-Guo, Cao, Yan-Qiang, Wu, Di, Li, Ai-Dong
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2015
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4398678/
https://www.ncbi.nlm.nih.gov/pubmed/25897298
http://dx.doi.org/10.1186/s11671-014-0714-1

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4398678/
https://www.ncbi.nlm.nih.gov/pubmed/25897298
http://dx.doi.org/10.1186/s11671-014-0714-1

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