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Electrical characteristic fluctuation of 16-nm-gate trapezoidal bulk FinFET devices with fixed top-fin width induced by random discrete dopants
In this work, we use an experimentally calibrated 3D quantum mechanically corrected device simulation to study the random dopant fluctuation (RDF) on DC characteristics of 16-nm-gate trapezoidal bulk fin-type field effect transistor (FinFET) devices. The fixed top-fin width, which is consistent with...
| Autores principales: | , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Springer US
2015
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| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4398683/ https://www.ncbi.nlm.nih.gov/pubmed/25897299 http://dx.doi.org/10.1186/s11671-015-0739-0 |