Low Temperature Processed Complementary Metal Oxide Semiconductor (CMOS) Device by Oxidation Effect from Capping Layer

In this report, both p- and n-type tin oxide thin-film transistors (TFTs) were simultaneously achieved using single-step deposition of the tin oxide channel layer. The tuning of charge carrier polarity in the tin oxide channel is achieved by selectively depositing a copper oxide capping layer on top...

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Detalles Bibliográficos
Autores principales: Wang, Zhenwei, Al-Jawhari, Hala A., Nayak, Pradipta K., Caraveo-Frescas, J. A., Wei, Nini, Hedhili, M. N., Alshareef, H. N.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2015
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4402970/
https://www.ncbi.nlm.nih.gov/pubmed/25892711
http://dx.doi.org/10.1038/srep09617

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4402970/
https://www.ncbi.nlm.nih.gov/pubmed/25892711
http://dx.doi.org/10.1038/srep09617

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