Novel thin-GaN LED structure adopted micro abraded surface to compare with conventional vertical LEDs in ultraviolet light

In this study, novel thin-GaN-based ultraviolet light-emitting diodes (NTG-LEDs) were fabricated using wafer bonding, laser lift-off, dry etching, textured surface, and interconnection techniques. Placing PN electrodes on the same side minimized the absorption caused by electrodes in conventional ve...

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Detalles Bibliográficos
Autores principales: Chiang, Yen Chih, Lin, Chien Chung, Kuo, Hao Chung
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2015
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4404426/
https://www.ncbi.nlm.nih.gov/pubmed/25977655
http://dx.doi.org/10.1186/s11671-015-0885-4

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4404426/
https://www.ncbi.nlm.nih.gov/pubmed/25977655
http://dx.doi.org/10.1186/s11671-015-0885-4

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