Conductive-bridging random access memory: challenges and opportunity for 3D architecture

The performances of conductive-bridging random access memory (CBRAM) have been reviewed for different switching materials such as chalcogenides, oxides, and bilayers in different structures. The structure consists of an inert electrode and one oxidized electrode of copper (Cu) or silver (Ag). The sw...

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Detalles Bibliográficos
Autores principales: Jana, Debanjan, Roy, Sourav, Panja, Rajeswar, Dutta, Mrinmoy, Rahaman, Sheikh Ziaur, Mahapatra, Rajat, Maikap, Siddheswar
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2015
Materias:
Nano Review
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4412874/
https://www.ncbi.nlm.nih.gov/pubmed/25977660
http://dx.doi.org/10.1186/s11671-015-0880-9

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4412874/
https://www.ncbi.nlm.nih.gov/pubmed/25977660
http://dx.doi.org/10.1186/s11671-015-0880-9

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