InAs/Si Hetero-Junction Nanotube Tunnel Transistors

Hetero-structure tunnel junctions in non-planar gate-all-around nanowire (GAA NW) tunnel FETs (TFETs) have shown significant enhancement in ‘ON’ state tunnel current over their all-silicon counterpart. Here we show the unique concept of nanotube TFET in a hetero-structure configuration that is capab...

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Detalles Bibliográficos
Autores principales: Hanna, Amir N., Fahad, Hossain M., Hussain, Muhammad M.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2015
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4413881/
https://www.ncbi.nlm.nih.gov/pubmed/25923104
http://dx.doi.org/10.1038/srep09843

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4413881/
https://www.ncbi.nlm.nih.gov/pubmed/25923104
http://dx.doi.org/10.1038/srep09843

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