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Three-terminal heterojunction bipolar transistor solar cell for high-efficiency photovoltaic conversion
Here we propose, for the first time, a solar cell characterized by a semiconductor transistor structure (n/p/n or p/n/p) where the base–emitter junction is made of a high-bandgap semiconductor and the collector is made of a low-bandgap semiconductor. We calculate its detailed-balance efficiency limi...
| Autores principales: | , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
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Nature Pub. Group
2015
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| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4423229/ https://www.ncbi.nlm.nih.gov/pubmed/25902374 http://dx.doi.org/10.1038/ncomms7902 |