The influence of process parameters and pulse ratio of precursors on the characteristics of La(1 − x)Al(x)O(3) films deposited by atomic layer deposition

The influence of processing parameters of aluminum oxide (Al(2)O(3)) and lanthanum oxide (La(2)O(3)) gate dielectric is investigated. Trimethylaluminum (TMA) and tris(isopropylcyclopentadienyl) lanthanum [La(iPrCp)(3)] were used as precursors separately, and H(2)O was used as oxidant. The ultra-thin...

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Detalles Bibliográficos
Autores principales: Fei, Chenxi, Liu, Hongxia, Wang, Xing, Fan, Xiaojiao
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2015
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4425714/
https://www.ncbi.nlm.nih.gov/pubmed/25983672
http://dx.doi.org/10.1186/s11671-015-0883-6

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4425714/
https://www.ncbi.nlm.nih.gov/pubmed/25983672
http://dx.doi.org/10.1186/s11671-015-0883-6

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