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The influence of process parameters and pulse ratio of precursors on the characteristics of La(1 − x)Al(x)O(3) films deposited by atomic layer deposition
The influence of processing parameters of aluminum oxide (Al(2)O(3)) and lanthanum oxide (La(2)O(3)) gate dielectric is investigated. Trimethylaluminum (TMA) and tris(isopropylcyclopentadienyl) lanthanum [La(iPrCp)(3)] were used as precursors separately, and H(2)O was used as oxidant. The ultra-thin...
| Autores principales: | , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Springer US
2015
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4425714/ https://www.ncbi.nlm.nih.gov/pubmed/25983672 http://dx.doi.org/10.1186/s11671-015-0883-6 |