Four-state ferroelectric spin-valve

Spin-valves had empowered the giant magnetoresistance (GMR) devices to have memory. The insertion of thin antiferromagnetic (AFM) films allowed two stable magnetic field-induced switchable resistance states persisting in remanence. In this letter, we show that, without the deliberate introduction of...

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Detalles Bibliográficos
Autores principales: Quindeau, Andy, Fina, Ignasi, Marti, Xavi, Apachitei, Geanina, Ferrer, Pilar, Nicklin, Chris, Pippel, Eckhard, Hesse, Dietrich, Alexe, Marin
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2015
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4426701/
https://www.ncbi.nlm.nih.gov/pubmed/25961513
http://dx.doi.org/10.1038/srep09749

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4426701/
https://www.ncbi.nlm.nih.gov/pubmed/25961513
http://dx.doi.org/10.1038/srep09749

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