Four-state ferroelectric spin-valve

Spin-valves had empowered the giant magnetoresistance (GMR) devices to have memory. The insertion of thin antiferromagnetic (AFM) films allowed two stable magnetic field-induced switchable resistance states persisting in remanence. In this letter, we show that, without the deliberate introduction of...

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Autores principales: Quindeau, Andy, Fina, Ignasi, Marti, Xavi, Apachitei, Geanina, Ferrer, Pilar, Nicklin, Chris, Pippel, Eckhard, Hesse, Dietrich, Alexe, Marin
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2015
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4426701/
https://www.ncbi.nlm.nih.gov/pubmed/25961513
http://dx.doi.org/10.1038/srep09749
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author Quindeau, Andy
Fina, Ignasi
Marti, Xavi
Apachitei, Geanina
Ferrer, Pilar
Nicklin, Chris
Pippel, Eckhard
Hesse, Dietrich
Alexe, Marin
author_facet Quindeau, Andy
Fina, Ignasi
Marti, Xavi
Apachitei, Geanina
Ferrer, Pilar
Nicklin, Chris
Pippel, Eckhard
Hesse, Dietrich
Alexe, Marin
author_sort Quindeau, Andy
collection PubMed
description Spin-valves had empowered the giant magnetoresistance (GMR) devices to have memory. The insertion of thin antiferromagnetic (AFM) films allowed two stable magnetic field-induced switchable resistance states persisting in remanence. In this letter, we show that, without the deliberate introduction of such an AFM layer, this functionality is transferred to multiferroic tunnel junctions (MFTJ) allowing us to create a four-state resistive memory device. We observed that the ferroelectric/ferromagnetic interface plays a crucial role in the stabilization of the exchange bias, which ultimately leads to four robust electro tunnel electro resistance (TER) and tunnel magneto resistance (TMR) states in the junction.
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spelling pubmed-44267012015-05-21 Four-state ferroelectric spin-valve Quindeau, Andy Fina, Ignasi Marti, Xavi Apachitei, Geanina Ferrer, Pilar Nicklin, Chris Pippel, Eckhard Hesse, Dietrich Alexe, Marin Sci Rep Article Spin-valves had empowered the giant magnetoresistance (GMR) devices to have memory. The insertion of thin antiferromagnetic (AFM) films allowed two stable magnetic field-induced switchable resistance states persisting in remanence. In this letter, we show that, without the deliberate introduction of such an AFM layer, this functionality is transferred to multiferroic tunnel junctions (MFTJ) allowing us to create a four-state resistive memory device. We observed that the ferroelectric/ferromagnetic interface plays a crucial role in the stabilization of the exchange bias, which ultimately leads to four robust electro tunnel electro resistance (TER) and tunnel magneto resistance (TMR) states in the junction. Nature Publishing Group 2015-05-11 /pmc/articles/PMC4426701/ /pubmed/25961513 http://dx.doi.org/10.1038/srep09749 Text en Copyright © 2015, Macmillan Publishers Limited http://creativecommons.org/licenses/by/4.0/ This work is licensed under a Creative Commons Attribution 4.0 International License. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in the credit line; if the material is not included under the Creative Commons license, users will need to obtain permission from the license holder to reproduce the material. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/
spellingShingle Article
Quindeau, Andy
Fina, Ignasi
Marti, Xavi
Apachitei, Geanina
Ferrer, Pilar
Nicklin, Chris
Pippel, Eckhard
Hesse, Dietrich
Alexe, Marin
Four-state ferroelectric spin-valve
title Four-state ferroelectric spin-valve
title_full Four-state ferroelectric spin-valve
title_fullStr Four-state ferroelectric spin-valve
title_full_unstemmed Four-state ferroelectric spin-valve
title_short Four-state ferroelectric spin-valve
title_sort four-state ferroelectric spin-valve
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4426701/
https://www.ncbi.nlm.nih.gov/pubmed/25961513
http://dx.doi.org/10.1038/srep09749
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