Integrated digital inverters based on two-dimensional anisotropic ReS(2) field-effect transistors

Semiconducting two-dimensional transition metal dichalcogenides are emerging as top candidates for post-silicon electronics. While most of them exhibit isotropic behaviour, lowering the lattice symmetry could induce anisotropic properties, which are both scientifically interesting and potentially us...

Descripción completa

Detalles Bibliográficos
Autores principales: Liu, Erfu, Fu, Yajun, Wang, Yaojia, Feng, Yanqing, Liu, Huimei, Wan, Xiangang, Zhou, Wei, Wang, Baigeng, Shao, Lubin, Ho, Ching-Hwa, Huang, Ying-Sheng, Cao, Zhengyi, Wang, Laiguo, Li, Aidong, Zeng, Junwen, Song, Fengqi, Wang, Xinran, Shi, Yi, Yuan, Hongtao, Hwang, Harold Y., Cui, Yi, Miao, Feng, Xing, Dingyu
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Pub. Group 2015
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4432591/
https://www.ncbi.nlm.nih.gov/pubmed/25947630
http://dx.doi.org/10.1038/ncomms7991

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4432591/
https://www.ncbi.nlm.nih.gov/pubmed/25947630
http://dx.doi.org/10.1038/ncomms7991

Ejemplares similares