Low-energy Resistive Random Access Memory Devices with No Need for a Compliance Current

A novel resistive random access memory device is designed with SrTiO(3)/ La(2/3)Sr(1/3)MnO(3) (LSMO)/MgAl(2)O(4) (MAO)/Cu structure, in which metallic epitaxial LSMO is employed as the bottom electrode rather than traditional metal materials. In this device, the critical external compliance current...

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Detalles Bibliográficos
Autores principales: Xu, Zedong, Yu, Lina, Wu, Yong, Dong, Chang, Deng, Ning, Xu, Xiaoguang, Miao, J., Jiang, Yong
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2015
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4434835/
https://www.ncbi.nlm.nih.gov/pubmed/25982101
http://dx.doi.org/10.1038/srep10409

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4434835/
https://www.ncbi.nlm.nih.gov/pubmed/25982101
http://dx.doi.org/10.1038/srep10409

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