Low-energy Resistive Random Access Memory Devices with No Need for a Compliance Current

A novel resistive random access memory device is designed with SrTiO(3)/ La(2/3)Sr(1/3)MnO(3) (LSMO)/MgAl(2)O(4) (MAO)/Cu structure, in which metallic epitaxial LSMO is employed as the bottom electrode rather than traditional metal materials. In this device, the critical external compliance current...

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Detalles Bibliográficos
Autores principales: Xu, Zedong, Yu, Lina, Wu, Yong, Dong, Chang, Deng, Ning, Xu, Xiaoguang, Miao, J., Jiang, Yong
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2015
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4434835/
https://www.ncbi.nlm.nih.gov/pubmed/25982101
http://dx.doi.org/10.1038/srep10409
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author Xu, Zedong
Yu, Lina
Wu, Yong
Dong, Chang
Deng, Ning
Xu, Xiaoguang
Miao, J.
Jiang, Yong
author_facet Xu, Zedong
Yu, Lina
Wu, Yong
Dong, Chang
Deng, Ning
Xu, Xiaoguang
Miao, J.
Jiang, Yong
author_sort Xu, Zedong
collection PubMed
description A novel resistive random access memory device is designed with SrTiO(3)/ La(2/3)Sr(1/3)MnO(3) (LSMO)/MgAl(2)O(4) (MAO)/Cu structure, in which metallic epitaxial LSMO is employed as the bottom electrode rather than traditional metal materials. In this device, the critical external compliance current is no longer necessary due to the high self-resistance of LSMO. The LMSO bottom electrode can act as a series resistor to offer a compliance current during the set process. Besides, the device also has excellent switching features which are originated in the formation of Cu filaments under external voltage. Therefore it provides the possibility of reducing power consumption and accelerating the commercialization of resistive switching devices.
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spelling pubmed-44348352015-05-28 Low-energy Resistive Random Access Memory Devices with No Need for a Compliance Current Xu, Zedong Yu, Lina Wu, Yong Dong, Chang Deng, Ning Xu, Xiaoguang Miao, J. Jiang, Yong Sci Rep Article A novel resistive random access memory device is designed with SrTiO(3)/ La(2/3)Sr(1/3)MnO(3) (LSMO)/MgAl(2)O(4) (MAO)/Cu structure, in which metallic epitaxial LSMO is employed as the bottom electrode rather than traditional metal materials. In this device, the critical external compliance current is no longer necessary due to the high self-resistance of LSMO. The LMSO bottom electrode can act as a series resistor to offer a compliance current during the set process. Besides, the device also has excellent switching features which are originated in the formation of Cu filaments under external voltage. Therefore it provides the possibility of reducing power consumption and accelerating the commercialization of resistive switching devices. Nature Publishing Group 2015-05-18 /pmc/articles/PMC4434835/ /pubmed/25982101 http://dx.doi.org/10.1038/srep10409 Text en Copyright © 2015, Macmillan Publishers Limited http://creativecommons.org/licenses/by/4.0/ This work is licensed under a Creative Commons Attribution 4.0 International License. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in the credit line; if the material is not included under the Creative Commons license, users will need to obtain permission from the license holder to reproduce the material. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/
spellingShingle Article
Xu, Zedong
Yu, Lina
Wu, Yong
Dong, Chang
Deng, Ning
Xu, Xiaoguang
Miao, J.
Jiang, Yong
Low-energy Resistive Random Access Memory Devices with No Need for a Compliance Current
title Low-energy Resistive Random Access Memory Devices with No Need for a Compliance Current
title_full Low-energy Resistive Random Access Memory Devices with No Need for a Compliance Current
title_fullStr Low-energy Resistive Random Access Memory Devices with No Need for a Compliance Current
title_full_unstemmed Low-energy Resistive Random Access Memory Devices with No Need for a Compliance Current
title_short Low-energy Resistive Random Access Memory Devices with No Need for a Compliance Current
title_sort low-energy resistive random access memory devices with no need for a compliance current
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4434835/
https://www.ncbi.nlm.nih.gov/pubmed/25982101
http://dx.doi.org/10.1038/srep10409
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